publication date : oct 2011 1 < silicon rf power mos fet ( discrete ) > rd 30hu f1 rohs compliance, silicon mosfet power transistor,520mhz,30w description RD30HUF1 is a mos fet type transistor specifically designed for u hf rf power amplifiers applications. features high power g ain: pout> 30 w, gp> 10 db @vdd= 12.5 v,f= 520m hz high efficiency: 55 %typ. application for output stage of high power amplifiers in u hf band mobile radio sets. rohs complian t rd 30huf 1 - 101 is a rohs complian t products. rohs compliance is indicate by the letter ? g? after the lot marking . absolute maximum ratings (tc=25 c unless otherwise noted) symbol parameter conditions ratings unit v dss drain to source voltage vgs=0v 30 v v gss gate to source voltage vds=0v +/ - 20 v pch channel dissipation tc=25 c 75 w pin input power zg=zl=50 ? 7.5 w id drain current - 7 a t ch channel temperature - 175 c tstg storage temperature - - 40 to +1 75 c rth j - c thermal resistance junction to case 2.0 c/w note 1: above parameters are guaranteed independently. outline drawing 1 4 . 0 + / - 0 . 4 3 . 0 + / - 0 . 4 5 . 1 + / - 0 . 5 r1.6 2 . 3 + / - 0 . 3 4-c1 2 6 . 6 + / - 0 . 3 0 . 1 0 2.8+/-0.3 3 18.0+/-0.3 22.0+/-0.3 7.6+/-0.3 1 7.2+/-0.5 pin 1.drain 2.source 3.gate unit:mm
< silicon rf power mos fet ( discrete ) > RD30HUF1 rohs compliance, silicon mosfet power transistor,520mhz,30w publication date : oct 2011 2 electrical cha racteristics (tc=25 c , unless otherwise noted) limits unit symbol parameter conditions min typ max. i dss zero gate voltage drain current v ds =1 7 v, v gs =0v - - 200 u a i gss gate to source leak current v gs =10v, v ds =0v - - 1 u a v th gate t hreshold v olt age v ds =1 2 v, i ds =1ma 1.2 1.7 2.2 v pout output power f = 520 mhz , v dd = 12.5 v 30 35 - w ? d 1 drain efficiency pin= 3w,idq=1.0a 50 55 - % load vswr tolerance v dd =15.2v,po=30w(pincontrol) f = 520 mhz ,idq=1.0a,zg=50 ? load vswr=20:1(all phase) no destroy - note : ab ove parameters , ratings , limits and conditions are subject to change.
< silicon rf power mos fet ( discrete ) > RD30HUF1 rohs compliance, silicon mosfet power transistor,520mhz,30w publication date : oct 2011 3 typical characteristics channnel dissipation vs. ambient temperature 0 20 40 60 80 100 0 40 80 120 160 200 ambient temperature ta(c) c h a n n e l d i s s i p a t i o n p c h ( w ) vds vs. crss characteristics 0 2 4 6 8 10 12 14 16 0 5 10 15 20 vds(v) c r s s ( p f ) ta=+25c f=1mhz vds vs. coss characteristics 0 20 40 60 80 100 120 0 5 10 15 20 vds(v) c o s s ( p f ) ta=+25c f=1mhz vds vs. ciss characteristics 0 20 40 60 80 100 120 140 0 5 10 15 20 vds(v) c i s s ( p f ) ta=+25c f=1mhz vds-ids characteristics 0 2 4 6 8 10 0 2 4 6 8 10 vds(v) i d s ( a ) ta=+25c vgs=4.5v vgs=4v vgs=3.5v vgs=3v vgs=2.5v vgs=5v vgs-ids characteristics 0 2 4 6 8 10 0 1 2 3 4 5 vgs(v) i d s ( a ) ta=+25c vds=10v
< silicon rf power mos fet ( discrete ) > RD30HUF1 rohs compliance, silicon mosfet power transistor,520mhz,30w publication date : oct 2011 4 typical characteristics vdd-po characteristics 0 10 20 30 40 50 4 6 8 10 12 14 vdd(v) p o ( w ) 0 2 4 6 8 10 i d d ( a ) po idd ta=25c f=520mhz pin=3w icq=1.0a zg=zi=50 ohm vgs-ids characteristics 2 0 2 4 6 8 10 1.5 2.5 3.5 4.5 vgs(v) i d s ( a ) vds=10v tc=-25~+75c -25c +75c +25c pin-po characteristics 0 10 20 30 40 50 10 20 30 40 pin(dbm) p o ( d b m ) , g p ( d b ) , i d d ( a ) 0 20 40 60 80 100 d ( % ) ta=+25c f=520mhz vdd=12.5v idq=1.0a po gp pin-po characteristics 0 10 20 30 40 50 0 2 4 6 8 pin(w) p o u t ( w ) , i d d ( a ) 0 20 40 60 80 100 d ( % ) po d idd ta=25c f=520mhz vdd=12.5v idq=1.0a
< silicon rf power mos fet ( discrete ) > RD30HUF1 rohs compliance, silicon mosfet power transistor,520mhz,30w publication date : oct 2011 5 test circuit(f=520mhz) l3:4turns,i.d6mm,d1.6mm p=1 silver plateted copper wire 5pf 15pf 15pf 7pf 15pf 15pf 90 8 14 15pf 7pf 5pf 10.8 4.8 8 8.2kohm l3 12 10 5 100 90 micro strip line width=4.2mm/50ohm,er:2.7,t=1.6mm note:board material ptfe substrate c1:2200pf 10uf in parallel c2 rf-out c1 l1:3turns,i.d6mm,d1.6mm p=1 silver plateted copper wire 100ohm vgg vdd rf-in 56pf dimensions:mm 5pf 15pf 56pf 5 100 9.1kohm l1 c2:2200pf*2 in parallel c3 c3:2200pf,330uf in parallel l2 l2:2turns,i.d6mm,d1.6mm p=1 silver plateted copper wire 520mhz RD30HUF1
< silicon rf power mos fet ( discrete ) > RD30HUF1 rohs compliance, silicon mosfet power transistor,520mhz,30w publication date : oct 2011 6 input/o utput impedance vs.frequency characteristics zin , zout f zin zout (mhz) (ohm) (ohm) conditions 440 1.16 - j 0.14 1.17+ j0. 74 po= 40 w, vdd=12.5v,pin= 3.0 w 480 0.90+j0.35 1.15+j1.07 po= 38 w, vdd=12.5v,pin= 3.0 w 520 0.88+ j 0.84 1.47+ j 1 .24 po= 35 w, vdd=12.5v,pin= 3.0 w f=520mhz zout f=520mhz z in f=480mhz zin f=440mhz zout f=480mhz zout f=440mhz zin zo=10 ?
< silicon rf power mos fet ( discrete ) > RD30HUF1 rohs compliance, silicon mosfet power transistor,520mhz,30w publication date : oct 2011 7 RD30HUF1 s-parameter data (@vdd=12.5v, id=500ma) freq. [mhz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 100 0.870 -173.4 7.566 74.2 0.016 -8.8 0.723 -170.2 150 0.880 -177.3 4.825 63.2 0.015 -18.0 0.748 -172.5 200 0.890 -179.5 3.398 55.1 0.013 -23.7 0.778 -173.9 250 0.902 178.2 2.568 47.0 0.011 -27.9 0.817 -175.6 300 0.911 176.0 1.982 40.2 0.010 -31.1 0.832 -177.6 350 0.921 174.1 1.588 34.5 0.008 -31.3 0.857 -179.7 400 0.930 172.1 1.299 29.0 0.007 -29.2 0.879 178.3 450 0.931 170.0 1.070 23.9 0.005 -21.8 0.887 176.3 500 0.941 168.0 0.907 20.3 0.004 -9.5 0.901 174.2 520 0.946 167.1 0.852 18.7 0.004 -3.9 0.908 173.4 550 0.946 166.3 0.780 15.9 0.004 7.5 0.913 172.3 600 0.947 164.2 0.673 12.5 0.004 28.3 0.916 170.5 650 0.951 162.5 0.589 10.1 0.004 46.8 0.928 168.6 700 0.957 160.7 0.522 6.6 0.006 53.0 0.932 166.7 750 0.960 159.1 0.464 4.1 0.007 56.5 0.936 164.9 800 0.962 157.6 0.419 2.2 0.007 63.6 0.942 163.1 850 0.962 155.8 0.383 -1.2 0.009 64.1 0.945 161.6 900 0.962 154.2 0.341 -3.0 0.009 63.5 0.946 160.0 950 0.961 152.7 0.318 -4.2 0.010 65.6 0.952 158.2 1000 0.961 151.2 0.296 -7.4 0.012 65.3 0.955 157.0 1050 0.965 149.6 0.270 -8.3 0.012 64.6 0.955 155.4 1100 0.964 148.2 0.259 -9.4 0.014 64.8 0.957 153.6 s11 s21 s12 s22
< silicon rf power mos fet ( discrete ) > RD30HUF1 rohs compliance, silicon mosfet power transistor,520mhz,30w publication date : oct 2011 8 a ttention: 1.high temperature ; this product might have a heat generation while op eration,please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. at the near t he product,do not place the combustible material that have possibilities to arise the fire. 2. generation of high frequency power ; this product generate a high frequency power. please take notice that do not leakage the unnecessary electric wave and use t his products without cause damage for human and property per normal operation. 3. before use; before use the product,please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. precautions for the use of m itsubishi silicon rf power devices: 1. the specifications of mention are not guarantee values in this data sheet. please confirm additional details regarding operation of these products from the formal specification sheet. for copies of the formal specifi cation sheets, p lease contact one of our sales offices . 2.ra series products (rf power amplifier modules) and rd series products (rf power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. in particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements and in the application, which is base station applications and fixed station applications that oper ate with long term continuous transmission and a higher on - off frequency during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain period and others as needed. for the reliability report which is describe d about predicted operating life time of mitsubishi silicon rf products , please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor . 3. rd series products use mosfet semiconductor technology. the y are sen sitive to esd voltage therefore a ppropriate esd precautions are required. 4. in the case of use in below than recommended frequency , t here is possibility to occur that the device is deteriorated or destroyed due to the rf - swing exceed the breakdown voltag e. 5. in order to maximize reliability of the equipment, it is better to keep the devices temperature low. it is recommended to utilize a sufficient sized heat - sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel tem perature for rd series products lower than 120deg/c(in case of tchmax=150deg/c) ,140deg/c(in case of tchmax=175deg/c) under standard conditions. 6. do not use the device at the exceeded the maximum rating condition. in case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. these results causes in fire or injury. 7. for specific precaution s regard ing assembly of these products into the equipment , please refer to the supplementary item s in the specification sheet. 8. warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it?s o riginal form. 9. for additional ?s afety first ? in your circuit design and notes regarding the materials , please refer the last page of this data sheet . 10. please refer to the additional precaution s in the formal specification sheet.
< silicon rf power mos fet ( discrete ) > RD30HUF1 rohs compliance, silicon mosfet power transistor,520mhz,30w publication date : oct 2011 9 ? 2011 mi tsubishi electric corporation. all rights reserved. keep safety first in your circuit designs! mitsubishi elec tric corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. re member to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non - flammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials ? these materials are intended as a reference to assist our customers in the selection of the mitsubishi semiconductor product best suited to the customer?s applicatio n; they do not convey any license under any intellectual property rights, or any other rights, belonging to mitsubishi electri c corporation or a third party. ? mitsubishi electric corporation assumes no responsibility for any damage, or infringement of any third - party?s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. ? all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these material s, and are subject to change by mitsubishi electric corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact mitsubishi electric corporation or an authorized m itsubishi semiconductor product distributor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccur acies or typographical errors. mitsubishi electric corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay attention to information published by mitsubishi electric corporatio n by various means, including the mitsubishi semiconductor home page (http: //www. m itsubishi e lectric.com/). ? when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. mitsubishi electric corporation assumes no responsibility for any damage, liability or other loss resulting from th e in formation contained herein. ? mitsubishi electric corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. please contact mitsubishi electric corp oration or an authorized mitsubishi semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or underse a repeater use. ? the prior written approval of mitsubishi electric corporation is necessary to reprint or reproduce in wh ole or in part these materials. ? if these products or technologies are subject to the japanese export control restrictions, they must b e exported under a license from the japanese government and cannot be imported into a country other than the approved destination. any diversion or re - export contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. ? please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor for further details on these materials or the products contained therein.
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